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| Standard Power MOSFET VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V ID25 5A 5A RDS(on) 2.4 2.0 N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C Maximum Ratings 1000 1000 20 30 5 20 180 -55 ... +150 150 -55 ... +150 V V V V A A W C C C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) D G = Gate, S = Source, G Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C D = Drain, TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2 4.5 100 TJ = 25C TJ = 125C 250 1 2.4 2.0 V Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers l IGSS IDSS R DS(on) VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 nA A mA Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density l IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved l l 5N100 5N100A Pulse test, t 300 s, duty cycle d 2 % l VGS(th) VDS = VGS, ID = 250 A V l VDSS VGS = 0 V, ID = 3 mA l l l l l 93009C (4/96) 1-4 IXTH 5 N100 IXTM 5 N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 6 2600 VGS = 0 V, VDS = 25 V, f = 1 MHz 180 45 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 4.7 , (External) 20 100 30 88 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 21 38 100 50 200 80 130 30 70 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W 1 IXTH 5 N100A IXTM 5 N100A TO-247 AD (IXTH) Outline gfs C iss C oss C rss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 0.5 * ID25, pulse test 2 3 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 5 20 1.5 900 A A V ns Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V TO-204AA (IXTM) Outline Pins 1 - Gate 2 - Source Case - Drain Dim. A A1 b D e e1 Millimeter Min. Max. 6.4 11.4 3.42 .97 1.09 22.22 10.67 11.17 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 L 7.93 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 5 N100 IXTM 5 N100 IXTH 5 N100A IXTM 5 N100A Fig. 1 Output Characteristics 9 8 7 TJ = 25C VGS = 10V Fig. 2 Input Admittance 9 7V 8 7 ID - Amperes ID - Amperes 6 5 4 3 2 1 0 6V 6 5 4 3 2 1 TJ = 25C 0 5 10 15 20 25 30 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 3.0 TJ = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 2.8 RDS(on) - Normalized 2.00 1.75 1.50 1.25 1.00 0.75 ID = 2.5A RDS(on) - Ohms 2.6 2.4 VGS = 10V 2.2 VGS = 15V 2.0 1.8 0 2 4 6 8 10 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 7 6 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 VGS(th) 1.1 BVDSS BV/VG(th) - Normalized ID - Amperes 5 4 5N100 5N100A 1.0 0.9 0.8 0.7 0.6 3 2 1 0 -50 -25 0 25 50 75 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXTH 5 N100 IXTM 5 N100 IXTH 5 N100A IXTM 5 N100A Fig.7 Gate Charge Characteristic Curve 10 9 8 7 VDS = 500V ID = 2.5A IG = 10mA Fig.8 Forward Bias Safe Operating Area 10s 10 Limited by RDS(on) 100s 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 ID - Amperes VGE - Volts 1ms 1 10ms 100ms 0.1 1 10 100 1000 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0 5 Ciss Fig.10 Source Current vs. Source to Drain Voltage 9 8 7 Capacitance - pF f = 1 MHz VDS = 25V ID - Amperes 6 5 4 3 2 TJ = 125C TJ = 25C Coss Crss 1 10 15 20 25 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VCE - Volts VDS - Volts Fig.11 Transient Thermal Impedance 1.000 D=0.5 Thermal Response - K/W D=0.2 0.100 D=0.1 D=0.05 D=0.02 D=0.01 0.010 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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